| PART |
Description |
Maker |
| APT8024B2FLL APT8024LFLL |
POWER MOS 7 800V 31A 0.240 Ohm
|
Advanced Power Technology
|
| APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT6045CVR APT5024BVFR |
POWER MOS V 600V 11.8A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6035 APT6035AVR |
POWER MOS V 600V 16A 0.350 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6035SVR APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 18A 0.350 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT60M75JFLL |
POWER MOS 7 600V 58A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT6029BLL |
POWER MOS 7 600V 21A 0.290 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT6038SFLL APT6038BFLL |
POWER MOS 7 600V 17A 0.380 Ohm
|
Advanced Power Technology
|
| IRG4PC40S IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
